IXTH26N60P IXTQ26N60P
Fig. 3. Output Characte ris tics
@ 125 o C
IXTT26N60P
3.2
IXTV26N60P IXTV26N60PS
Fig. 4. R DS(on ) Norm alized to 0.5 I D25
Value vs. Junction Tem pe rature
24
V GS = 10V
7V
2.8
V GS = 10V
20
2.4
16
12
8
4
0
6V
5V
2
1.6
1.2
0.8
0.4
I D = 26A
I D = 13A
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
3.2
V D S - Volts
Fig. 5. R DS(on) Norm alized to
0.5 I D25 Value vs . I D
30
T J - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Te m perature
2.8
2.4
V GS = 10V
T J = 125 o C
27
24
21
18
2
1.6
15
12
9
1.2
0.8
T J = 25 o C
6
3
0
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
150
50
45
I D - Amperes
Fig. 7. Input Adm ittance
50
45
T C - Degrees Centigrade
Fig. 8. Transconductance
40
35
30
25
40
35
30
25
T J = -40 o C
25 o C
125 o C
20
15
10
5
0
T J = 125 o C
25 o C
-40 o C
20
15
10
5
0
4
4.5
5
5.5
6
6.5
7
7.5
0
5
10
15
20
25
30
35
40
45
50
V G S - Volts
? 2006 IXYS All rights reserved
I D - Amperes
相关PDF资料
IXTT30N50L MOSFET N-CH 500V 30A TO-268
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IXTT30N60P MOSFET N-CH 600V 30A TO-268 D3
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